METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating capacitor of a semiconductor device is provided to prevent a leakage current by forming a support layer pattern supporting an upper end of the storage node and reducing a crack. CONSTITUTION: An inter-layer insulating film(210) including a storage node contact(220) is formed on a semiconductor substrate(200). A mold dielectric film and a metal oxide support layer are formed on the inter-layer insulating film. The metal oxide support layer and the mold dielectric film are patterned to form a storage node. A support layer pattern supporting the upper end of the storage electrode by removing a part of metal oxide support layer. The mold dielectric film is removed to form the storage electrode of a cylindrical structure. The dielectric film(280) and the plate electrode(290) are formed on the storage electrode.