METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A capacitor forming method of a semiconductor device is provided to prevent pattern defect during a patterning process by minimizing the thickness of a capping layer which is formed in the upper part of a dummy node hole. CONSTITUTION: A storage node hole(200) is formed in a cell region(A) and a dummy node hole which is larger than the storage node hole is formed in the circumference of the cell region by patterning a mold insulation layer and a supporting layer. A storage electrode(171) which has a node separated in the inner wall of the storage node hole and the inner wall of the dummy node hole is formed. A first capping layer is formed on the upper part of the outcome. A first capping layer with an opening is formed in the upper part of the dummy node hole. The thickness of the capping layer is reduced by using an anisotropic etching. A second capping layer is formed on the first capping layer which has a reduced thickness. A cylindrical structured storage electrode is formed by removing the first capping layer, the second capping layer, and the mold insulation layer.