| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of improving a relief efficiency of a defective cell. SOLUTION: This resistance change type nonvolatile semiconductor memory is equipped with: a memory cell array 1A in which the plurality of memory cells MC including resistance change type memory elements are arranged; a plurality of word lines WL to which the plurality of memory cells MC are connected; a redundancy cell array 4 in which the plurality of redundancy cells RMC are arranged; a plurality of redundancy word lines RWL to which the plurality of redundancy cells RMC are connected; and a control circuit for relieving the defective cells. The memory cell array 1A and the redundancy cell array 4 include two or more areas 10A, 11A, 40, 41 to be discriminated according to a column address information CAn, and by the control circuit, a part of the word line WLa<0> to which the defective cell bMC<SB>1</SB>is connected, and a part of the redundancy word line RWL<0> are replaced for every areas 10A, 11A, 40, 41. COPYRIGHT: (C)2010,JPO&INPIT |
