发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To effectively prevent arcing which is an abnormal discharge occurring when a member such as a shadow ring is arranged close to a peripheral edge of a substrate. SOLUTION: A tungsten film 92 is prepared by performing sputtering on a substrate 9 held by a substrate holder 3 within a process chamber 1. The substrate 9 is subjected to the electrostatic attraction to a dielectric plate 31 by the voltage to be applied to an attraction electrode 32 by an attraction power source 33, and a shadow shield 62 prevents any thin film deposition on an area at the predetermined distance from a peripheral edge of the substrate 9. A conductive film 71 to cover a part of a surface of the dielectric plate 31 is brought into contact with a back side of the substrate 9, and insulated from a grounding, and short-circuited to the shadow shield 62 by a short-circuit wiring 76. The electric potential of the conductive film 71 is measured by a voltmeter 72, and a determination means 74 determines the occurrence of arcing from an abrupt fluctuation in the measured value of the voltmeter 72. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010144256(A) 申请公布日期 2010.07.01
申请号 JP20100048766 申请日期 2010.03.05
申请人 CANON ANELVA CORP 发明人 KOBAYASHI MASAHIKO;HOTTA KAZUKI;ASANUMA HIROBUMI
分类号 C23C14/50;C23C14/34;H01L21/28;H01L21/285 主分类号 C23C14/50
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