| 摘要 |
A semiconductor storage device includes: a memory cell array including a plurality of first wirings, a plurality of second wirings intersecting with the first wirings, and a plurality of memory cells respectively arranged at intersections of the first and second wirings; a plurality of drivers that drive the first wirings; a dummy wiring continuously extending in a direction of the first wirings and in a direction of the second wirings, a part of the dummy wiring extending in the direction of the second wirings being connected to the plurality of drivers; a plurality of switch circuits connected to respective connection portions of the plurality of drivers and the dummy wiring; and a replica line extending in the direction of the second wirings and connected to the dummy wiring through the plurality of switch circuits.
|
