| 摘要 |
The present invention relates to a method for trimming passive devices during fabrication to account for process variations. More particularly, the present invention relates to a method by which an adjustable device layer comprised within a passive device (e.g., resistor body, capacitor electrodes) can be measured and subsequently trimmed (e.g., etched to reduce size) during processing to correct for process variations. Essentially, an operational parameter is measured for a plurality of passive devices. The measurements are used to form an adjustment map for a region of a semiconductor body (e.g., wafer) comprising information pertaining to operational parameters as a function of spatial coordinates. The adjustment map is utilized by a DMD projector configured to pattern openings into a hardmask configured over the adjustable device layer. The adjustable device layer is then etched in regions not protected by the hardmask, thereby effectively trimming the passive device according to the adjustment map.
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