| 摘要 |
There is provided a method of manufacturing a semiconductor device that allows the threshold voltage of a p-type MOSFET to be controlled with accuracy as high as possible in a multi-oxide process. The method forms two types of field-effect transistors including gate insulating films having different film thickness in a first region and a second region on a silicon substrate, respectively, and includes forming a silicon-germanium film (Si1-xGex, 0<x<1) in each of the first and second regions, forming a first gate insulating film on the silicon-germanium film in the first and second regions, removing the first gate insulating film in the first region, forming a protective film for the silicon-germanium film on the silicon-germanium film formed in the first region, and forming a second gate insulating film comprising a high-k film on the protective film in the first region and the first gate insulating film in the second region.
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