Producing a silicon carbide volume single crystal, comprises producing silicon carbide growth gas phase in crystal growing area of culture crucible and growing-off the silicon carbide volume single crystal from the gas phase by deposition

摘要

The method for producing a silicon carbide volume single crystal (2), comprises producing a silicon carbide growth gas phase (7) in a crystal growing area (5) of a culture crucible (3) and growing-off the silicon carbide volume single crystal from the gas phase by deposition, and storing the silicon carbide growth gas phase made of a silicon carbide source material (6), which is present in a silicon carbide supply area of the culture crucible. A fine-grain crucible material is partially used for the culture crucible, and consists of graphite with a density of 1.75 g/cm 3>. The method for producing a silicon carbide volume single crystal (2), comprises producing a silicon carbide growth gas phase (7) in a crystal growing area (5) of a culture crucible (3) and growing-off the silicon carbide volume single crystal from the silicon carbide growth gas phase by deposition, and storing the silicon carbide growth gas phase made of a silicon carbide source material (6), which is present in a silicon carbide supply area of the culture crucible. A fine-grain crucible material is partially used for the culture crucible, consists of graphite with a density of 1.75 g/cm 3>and an open porosity of highly 15% and has a grain structure with grains, where 90% of the grain size of the graphite grains have highly 10 mu m. The fine-grain crucible material is only provided at a lateral inner wall in the crystal growing area. An independent claim is included for a single-crystal silicon carbide substrate.