发明名称 SPUTTERING TARGET AND METHOD OF FILM FORMATION
摘要 <p>A sputtering target characterized by comprising: either cobalt and platinum or cobalt, chromium, and platinum; SiO2 and/or TiO2; and Co3O4 and/or CoO.  By conducting sputtering using the sputtering target, a magnetic recording film having a granular structure and high coercive force can be formed.  When the sputtering target is produced by sintering raw-material powders at 1,000ºC or lower, SiO2, TiO2, Co3O4, and CoO can be prevented from being reduced during the sintering.  Thus, the sputtering target can be obtained as a more effective target.</p>
申请公布号 WO2010074171(A1) 申请公布日期 2010.07.01
申请号 WO2009JP71483 申请日期 2009.12.24
申请人 MITSUI MINING & SMELTING CO., LTD.;HAYASHI, HIROMITSU 发明人 HAYASHI, HIROMITSU
分类号 C23C14/34;B22F3/14;C22C1/05;C22C19/07;G11B5/851;H01F10/16;H01F41/18 主分类号 C23C14/34
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