NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor light emitting device and a method for manufacturing the same are provided to improve the durability to electrostatic discharge by forming a plurality of V-feet and protrusions respectively on an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. CONSTITUTION: An n-type nitride semiconductor layer(120) is formed on a substrate(110). A plurality of V-feet(120a) is formed on the upper side of the n-type nitride semiconductor layer. An active layer(130) is formed on the n-type nitride semiconductor layer. The active layer includes a curve which is formed by the V-feet. A p-type nitride semiconductor layer(140) is formed on the active layer. A plurality of protrusions(140a) is formed on the upper side of the p-type nitride semiconductor layer.