发明名称 METHOD FOR FABRICATING CYLINDER TYPE CAPACITOR
摘要 PURPOSE: A cylindrical capacitor forming method is provided to control an inclination of a lower electrode by forming a first and a second floated pinning layers. CONSTITUTION: A connection contact(203) is formed through a lower layer(201) on a semiconductor substrate(100). A mold layer is formed on the connection contact. A first floated pinning layer(410) is formed on the mold layer. A second floated pinning layer(420) is formed on the first floated pinning layer. An opening hole is formed through the first and the second floated pinning layers and the mold layer in order to expose the connection contact. A lower electrode(510) is formed according to a profile of the opening hole. A dielectric layer and the upper electrode are formed on the lower electrode.
申请公布号 KR20100073101(A) 申请公布日期 2010.07.01
申请号 KR20080131688 申请日期 2008.12.22
申请人 HYNIX SEMICONDUCTOR INC. 发明人 EUN, BYUNG SOO
分类号 H01G4/10;H01G4/12 主分类号 H01G4/10
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