| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve performance, without impairing the productivity in a semiconductor device which laminates a large number of semiconductor chips. <P>SOLUTION: The semiconductor device has a plurality of elements, an interlayer insulating film 2, and a pad 3, sequentially formed on the principal surface s1 of a silicon substrate 1, and is further provided with a bump electrode 4 electrically connected to the pad 3, and a rear surface electrode 6 formed on the rear surface s2 of the silicon substrate 1 and electrically connected with the bump electrode 4. The bump electrode 4 penetrates the pad 3, and the bump electrode has a protruded portion d1 which penetrates the pad and which is protruded toward a silicon substrate 1 side. The rear-surface electrode 6 is electrically connected to the bump electrode 4 by forming the rear surface electrode, in such a manner that the interior side of a rear-surface electrode hole 7, which reaches the protruded portion d1 of the bump electrode 4 toward the principal surface s1 side from the rear surface s2 side of the silicon substrate 1 and which does not reach the pad 3, is covered. <P>COPYRIGHT: (C)2010,JPO&INPIT |
