发明名称 METHOD OF MANUFACTURING WIRING STRUCTURE, AND WIRING STRUCTURE
摘要 PROBLEM TO BE SOLVED: To solve a problem of difficulty in forming a catalyst film that has a flat and minute surface on its sidewall so as to grow a carbon nanotube in a lateral direction (a direction parallel to the surface of a substrate). SOLUTION: A first thickness of catalytic layer for longitudinal wiring is formed in two longitudinal wiring areas 23 separated from each other on a substrate surface and, a second thickness of catalytic layer for lateral wiring is formed on a lateral wiring area continuous from one longitudinal wiring area to the other longitudinal wiring area, with the second thickness set larger than the first thickness. A structure containing carbon is vapor deposited on the catalytic layer for longitudinal wiring and the catalytic layer for lateral wiring. The first and second thicknesses are set so that, in the initial stage of vapor deposition, graphite grows on the catalytic layer for longitudinal wiring and the catalytic layer for lateral wiring, then, carbon nanotubes grow between the graphite on the longitudinal wiring areas and the substrate, and thereby, the graphite on the lateral wiring area is held in a space by the carbon nanotubes grown on the longitudinal wiring areas. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010147237(A) 申请公布日期 2010.07.01
申请号 JP20080322660 申请日期 2008.12.18
申请人 FUJITSU LTD 发明人 KONDO DAIYU;SATO SHINTARO
分类号 H01L21/768;C01B31/02;C23C16/26;H01L23/522 主分类号 H01L21/768
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