| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a function as a gate insulating film ensuring a good insulating property and an extremely high dielectric ratio and a function as a metallic gate electrode where no depletion layer is formed, and which can significantly increase an electrostatic control power over a channel region of a gate voltage. Ž<P>SOLUTION: The semiconductor device includes: a first source region 12a and a first drain region 12b of a second conductivity type spaced from each other in a first semiconductor layer 12 of a first conductivity type; a first channel region 12c in the first semiconductor layer between the first source region and the first drain region; a first gate electrode 60 of a half-metal ferromagnetic metal on the first channel region; and a first source electrode 50a of a half-metal ferromagnetic metal to be connected to the first source region. The direction of magnetization 64c of the first gate electrode is substantially anti-parallel to the direction of magnetization 64a of the first source electrode. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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