| 摘要 |
A method for removing native oxide that remains on a surface of a semiconductor device is presented. The manufacturing method includes the steps of placing, supplying, moving, and annealing. The placing step includes placing a semiconductor substrate into a first process chamber. The supplying step includes supplying an etchant gas that reacts with the native oxide when the first process chamber is purged and sealed away from air. The moving step includes moving the semiconductor substrate with the byproduct formed on it into a second process chamber in which the moving step can be exposed to air. The annealing the semiconductor substrate in the second process chamber removes the byproduct.
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