| 摘要 |
A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.
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