摘要 |
The present invention relates to an adhesive layer for a semiconductor and a dual-layer adhesive film prepared by using the same, wherein in order to solve the problem of deteriorating reliability of a semiconductor chip caused by migration of transition metals and transition metal ions, bonding with transition metal ions is used or transition metal ions are oxidized or reduced, and an adhesive layer including a functional group that can remarkably reduce the mobility of a transition method is used; an adhesive film is further formed that enables the flow properties to be assured, taking the subsequent wire bonding process into consideration, so that stability of semiconductor operation may be enhanced, dimensional stability of the adhesive film assured, tensile strength increased, and reliability of the semiconductor chip bonding process enhanced. |
申请人 |
CHEIL INDUSTRIES INC.;SONG, KI TAE;CHOI, HAN NIM;JEONG, CHUL;IM, SU MI;KIM, SANG JIN;HONG, YONG WOO;PARK, BAEK SOUNG |
发明人 |
SONG, KI TAE;CHOI, HAN NIM;JEONG, CHUL;IM, SU MI;KIM, SANG JIN;HONG, YONG WOO;PARK, BAEK SOUNG |