Improvements in semi-conductive devices

摘要

831,816. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Feb. 26, 1957 [Feb. 29, 1956], No. 6435/57. Class 37. A method of making a device comprising a semi-conductor body with at least one rectifying electrode and an ohmic electrode includes the steps of etching the body and electrode assembly and then introducing it into an atmosphere comprising at least one halogen (excluding fluorine) or a hydrogen halide, and preferably water vapour. In one embodiment an alloy junction transistor, the main body of which is P-type silicon, is etched and then introduced into a glass envelope containing dry hydrogen chloride. The envelope is then sealed, heated to 180‹ C. and finally cooled. Alternatively moist hydrogen fluoride or moist bromine vapour may be used. In an embodiment comprising an alloy junction transistor the base of which is N-type germanium dry hydrogen chloride is introduced into the envelope, followed by water vapour. In all cases, before finally sealing the envelope, the gas pressure may be reduced to 10-2 mm. of mercury by pumping.