| 摘要 |
<p>Disclosed is a sputtering apparatus (10) comprising: a chamber (12); a holding unit (16) which holds a substrate (14); a rotating cathode (18) which is so arranged that the circumferential surface thereof faces the substrate held by the holding unit (16); an auxiliary cathode (20) capable of supplying a metal material to the surface of the rotating cathode (18); a gas-shielding member (30) which controls the movement of a gas between a film formation chamber (22) in which the holding unit (16) is provided and a metal material supply chamber (24); and a reactive gas supply channel (32) which is connected to the film formation chamber (22) for the purpose of supplying a reactive gas that reacts with a sputtered target material and forms a metal compound. The auxiliary cathode (20) supplies an additional metal material to the surface of the sputtered rotating cathode (18), said metal material being the same material as the target material.</p> |
