发明名称 POLYCRYSTALLINE SILICON MANUFACTURING METHOD AND REACTION FURNACE USED THEREFOR
摘要 <p>Disclosed is a method for manufacturing highly pure polycrystalline silicon by reducing chlorosilane with metallic zinc whereby a large amount of polycrystalline silicon can be produced continuously and stably while zinc chloride is processed without using hydrolysis of the zinc chloride. Further disclosed is a reaction furnace used for said method. Chlorosilane and metallic zinc are reacted, producing polycrystalline silicon. The polycrystalline silicon and zinc chloride are separated from the reaction product obtained by reacting the chlorosilane and the metallic zinc. Metallic zinc and magnesium chloride are produced by reacting the separated zinc chloride with metallic magnesium. The metallic zinc that is produced is used in a reaction with chlorosilane. Chlorine and metallic magnesium are produced by electrolysis of the magnesium chloride that is produced. The chlorine that is produced is used for the production of chlorosilane. The metallic magnesium that is produced is used in a reaction with the zinc chloride that has been separated.</p>
申请公布号 WO2010074180(A1) 申请公布日期 2010.07.01
申请号 WO2009JP71497 申请日期 2009.12.24
申请人 OGASAWARA, TADASHI 发明人 OGASAWARA, TADASHI
分类号 C01B33/033;C22B5/04;C22B19/20;C25B1/26;C25C3/04 主分类号 C01B33/033
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