METHOD OF FABRICATING HIGH INTEGRATED SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS FABRICATED THEREBY

摘要

PURPOSE: A method for fabricating high integrated semiconductor apparatus and a semiconductor apparatus fabricated thereby are provided to prevent the damage of a channel region by replacing a gate formation process with an ion implantation process and a wet etching process. CONSTITUTION: A pillar pattern is formed on a semiconductor substrate(202). A conductive layer(210) surrounds the pattern. An oxide layer(204) is formed by partially changing the property of the conductive layer through an ion implantation process. A hard mask nitride layer(206) is formed on the oxide layer. A gate oxide layer is formed between the pattern and the conductive layer.