| 摘要 |
<p>PURPOSE: A semiconductor device of common source structure and a manufacturing method of the semiconductor device of the common source structure are provided to prevent loss of the semiconductor substrate and opening of the common source by realizing the common source of poly-line shape. CONSTITUTION: A gate line having a floating gate(120) of line-shape, a dielectric layer(125), and a control gate(130) is formed on a semiconductor substrate(100). A first insulation layer is formed on the semiconductor substrate including the gate line. A liner trench is formed to expose semiconductor substrate between the gate lines. A common source(180) is formed in the trench.</p> |
