Method for manufacturing a resistive switching memory device

摘要

A method for manufacturing a resistive switching memory device (115) comprises providing a substrate (100) comprising an electrical contact (101), providing on the substrate (100) a dielectric layer (102) comprising a trench exposing the electrical contact (101), and providing in the trench at least the bottom electrode (103b) and the resistive switching element (140) of the resistive memory device (115). The method may furthermore comprise providing a top electrode (105) at least on or in the trench, in contact with the resistive switching element (140). The present invention also provides corresponding resistive switching memory devices (115).