PLASMA TREATMENT APPARATUS, PLASMA TREATMENT METHOD, AND SEMICONDUCTOR ELEMENT

摘要

In a chamber (1) of a plasma processing apparatus (50), a cathode electrode (2) and an anode electrode (3) are disposed at a distance from each other. The cathode electrode (2) is supplied with electric power from an electric power supply portion (4). The anode electrode (3) is electrically grounded and a substrate (7) is placed thereon. The anode electrode (3) contains a heater (21). In an upper wall portion of the chamber (1), an exhaust port (19a) is provided and connected to a vacuum pump (20b) through an exhaust pipe (20a). In a lower wall portion of a wall surface of the chamber (1), a gas introduction port (10) is provided. A gas supply portion (8) is provided outside the chamber (1).