发明名称 SUBSTRATE PLACING MECHANISM AND SUBSTRATE PROCESSING APPARATUS
摘要 Provided is a substrate placing mechanism whereupon a substrate to be processed is to be placed. The substrate placing mechanism is provided with a heater plate (21), which has a surface whereupon the substrate to be processed is to be placed, an embedded heating body for heating a substrate (W) to be processed to a film forming temperature at which the film can be deposited, and a first lift inserting hole having a large diameter section and a small diameter section; a temperature adjusting jacket, which is formed to cover at least a surface other than the surface, is at a non film forming temperature below a film forming temperature, with a second lift pin inserting hole having a large diameter section and a small diameter section; a first lift pin (24b-1) having a cover section, which can be inserted into the large diameter section, and a shaft section which can be inserted into both the large diameter section and the small diameter section; a second lift pin (24b-2) having a cover section , which can be inserted into the large diameter section, and a shaft section, which can be inserted into both the large diameter section and the small diameter section .
申请公布号 KR20100072180(A) 申请公布日期 2010.06.30
申请号 KR20107005343 申请日期 2008.09.03
申请人 TOKYO ELECTRON LIMITED 发明人 HARA MASAMICHI;GOMI ATSUSHI;MAEKAWA SHINJI;TAGA SATOSHI
分类号 H01L21/687;H01L21/205 主分类号 H01L21/687
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