发明名称 |
Capacitor and method for fabricating the same |
摘要 |
A capacitor includes a lower electrode (303); a dielectric layer (304A) formed on a predetermined portion of the lower electrode; an upper electrode (305A) formed on the dielectric layer; a hard mask pattern (306A) formed on the upper electrode; and an isolation layer (307A) having a shape of a spacer, formed on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer. |
申请公布号 |
EP2202783(A2) |
申请公布日期 |
2010.06.30 |
申请号 |
EP20090252370 |
申请日期 |
2009.10.07 |
申请人 |
MAGNACHIP SEMICONDUCTOR LTD. |
发明人 |
CHO, JIN-YOUN;KANG, YOUNG-SOO;KIM, JONG-II;KOO, SANG-GEUN |
分类号 |
H01L21/02;H01L21/311;H01L21/3213;H01L49/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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