发明名称 Capacitor and method for fabricating the same
摘要 A capacitor includes a lower electrode (303); a dielectric layer (304A) formed on a predetermined portion of the lower electrode; an upper electrode (305A) formed on the dielectric layer; a hard mask pattern (306A) formed on the upper electrode; and an isolation layer (307A) having a shape of a spacer, formed on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer.
申请公布号 EP2202783(A2) 申请公布日期 2010.06.30
申请号 EP20090252370 申请日期 2009.10.07
申请人 MAGNACHIP SEMICONDUCTOR LTD. 发明人 CHO, JIN-YOUN;KANG, YOUNG-SOO;KIM, JONG-II;KOO, SANG-GEUN
分类号 H01L21/02;H01L21/311;H01L21/3213;H01L49/02 主分类号 H01L21/02
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