Diamond interconnection substrate manufacturing method

摘要

A diamond interconnection substrate (10) of the present invention includes a diamond substrate (1), and an implantation layer (2, 3, 4) constituted by the presence of metal elements having a thickness of at least 10 nm and a concentration of at least 10 20 cm -3 in the diamond substrate (1). The implantation layer (2, 3, 4) is formed by ion implanting metal elements with a high energy level of at least 1 MeV and a high dose of at least 10 16 cm -2 . Thus, a technique is provided by which a multi-layer interconnection is realized in the diamond having the highest thermal conductivity of all materials.