Method of manufacturing an irreversible memory using a plastic deformation

摘要

An irreversible memory support comprises a network of memory cells (3) addressable respectively by first and second conductors (1, 2). Each memory cell incorporates a selective electric connection between the associated first and second conductors. - The selective electric connection of a memory cell incorporates, between the two conductors, a zone (10) with an active layer (8) that is initially insulating and able to be rendered electrically conducting by localised plastic deformation (4). A binary information stored in the memory cell is determined by the state of electric conduction of the zone corresponding to the active layer. - An INDEPENDENT CLAIM is also included for the production of this irreversible memory support.