发明名称 |
POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND |
摘要 |
<p>PURPOSE: A positive resist composition, a method for forming a resist pattern, and a novel polymer are provided to obtain excellent lithography properties including sensitivity to an exposed light source and a resolution. CONSTITUTION: A positive resist composition contains a base component having solubility to an alkali developer and an acid generator creating acid through exposure. The based component contains a polymer having a structure unit which is marked as a chemical formula 1. In the chemical formula 1, R1 is a hydrogen atom, an alkyl group, or halogenated alkyl group. A is a divalent straight chain or branched chain type aliphatic hydrocarbon group.</p> |
申请公布号 |
KR20100072156(A) |
申请公布日期 |
2010.06.30 |
申请号 |
KR20100054530 |
申请日期 |
2010.06.09 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
SHIONO DAIJU;DAZAI TAKAHIRO;SHIMIZU HIROAKI |
分类号 |
G03F7/039;C08F20/10;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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