发明名称 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND
摘要 <p>PURPOSE: A positive resist composition, a method for forming a resist pattern, and a novel polymer are provided to obtain excellent lithography properties including sensitivity to an exposed light source and a resolution. CONSTITUTION: A positive resist composition contains a base component having solubility to an alkali developer and an acid generator creating acid through exposure. The based component contains a polymer having a structure unit which is marked as a chemical formula 1. In the chemical formula 1, R1 is a hydrogen atom, an alkyl group, or halogenated alkyl group. A is a divalent straight chain or branched chain type aliphatic hydrocarbon group.</p>
申请公布号 KR20100072156(A) 申请公布日期 2010.06.30
申请号 KR20100054530 申请日期 2010.06.09
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 SHIONO DAIJU;DAZAI TAKAHIRO;SHIMIZU HIROAKI
分类号 G03F7/039;C08F20/10;H01L21/027 主分类号 G03F7/039
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