发明名称 Ultratough CVD single crystal diamond and three dimensional growth thereof
摘要 The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
申请公布号 ZA200702010(B) 申请公布日期 2010.06.30
申请号 ZA20070002010 申请日期 2007.03.07
申请人 CARNEGIE INSTITUTION OF WASHINGTON 发明人 RUSSELL J. HEMLEY;HO-KWANG MAO;CHIH-SHIUE YAN
分类号 C30B 主分类号 C30B
代理机构 代理人
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