发明名称 |
Ultratough CVD single crystal diamond and three dimensional growth thereof |
摘要 |
The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate. |
申请公布号 |
ZA200702010(B) |
申请公布日期 |
2010.06.30 |
申请号 |
ZA20070002010 |
申请日期 |
2007.03.07 |
申请人 |
CARNEGIE INSTITUTION OF WASHINGTON |
发明人 |
RUSSELL J. HEMLEY;HO-KWANG MAO;CHIH-SHIUE YAN |
分类号 |
C30B |
主分类号 |
C30B |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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