| 摘要 |
<p>A photovoltaic device having improved conversion efficiency as a result of an increase in the open-circuit voltage is provided. The photovoltaic device (100) comprises a photovoltaic layer (3) having a stacked p-layer (41), i-layer (42) and n-layer (43), wherein the p-layer (41) is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 25%, and the crystallization ratio of the p-layer is not less than 0 but less than 3. Alternatively, the n-layer (43) may be a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, wherein the crystallization ratio of the n-layer is not less than 0 but less than 3. Alternatively, an interface layer may be formed at the interface between the p-layer (41) and the i-layer (42), wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 30%. Alternatively, an interface layer may be formed at the interface between the n-layer (43) and the i-layer (42),
wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%.</p> |
