发明名称 Circuit structure and process thereof
摘要 A circuit structure has a first dielectric layer, a first circuit pattern embedded in the first dielectric layer and having a first via pad, a first conductive via passing through the first dielectric layer and connecting to the first via pad, and an independent via pad disposed on a surface of the first dielectric layer away from the first via pad and connecting to one end of the first conductive via. The circuit structure further has a second dielectric layer disposed over the surface of the first dielectric layer where the independent via pad is disposed, a second conductive via passing through the second dielectric layer and connecting to the independent via pad, and a second circuit pattern embedded in the second dielectric layer, located at a surface thereof away from the independent via pad, and having a second via pad connected to the second conductive via.
申请公布号 US7745933(B2) 申请公布日期 2010.06.29
申请号 US20070739515 申请日期 2007.04.24
申请人 UNITED MICROELECTRONICS CORP. 发明人 YU CHENG-PO
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
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