发明名称 |
Electron beam apparatus and method of manufacturing semiconductor device using the apparatus |
摘要 |
The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
|
申请公布号 |
US7745784(B2) |
申请公布日期 |
2010.06.29 |
申请号 |
US20070819026 |
申请日期 |
2007.06.25 |
申请人 |
EBARA CORPORATION |
发明人 |
NAKASUJI MAMORU;SATAKE TOHRU;WATANABE KENJI;MURAKAMI TAKESHI;NOJI NOBUHARU;SOBUKAWA HIROSI;KARIMATA TSUTOMU;YOSHIKAWA SHOJI;KIMBA TOSHIFUMI;OOWADA SHIN;SAITO MITSUMI;HAMASHIMA MUNEKI;TAKAGI TORU;KIHARA NAOTO;NISHIMURA HIROSHI |
分类号 |
H01J37/26;G01N23/225;G01Q30/06;H01J37/06;H01J37/073;H01J37/18;H01J37/20;H01J37/22;H01J37/244;H01J37/28 |
主分类号 |
H01J37/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|