| 摘要 |
A method of manufacturing a semiconductor device begins when a first dielectric pattern is formed on and/or over a substrate, and a first etching process is performed to form a trench in the substrate. An edge portion of the first trench is exposed. An oxidation process is performed on and/or over the substrate rounding the edge portion of the trench. A second dielectric is formed on and/or over the substrate including the trench, and a planarization process is performed on the second dielectric. A photoresist pattern is formed on and/or over the second dielectric corresponding to the trench, and a second etching process is performed to form a second dielectric pattern filling the trench. The photoresist pattern is removed. A second cleaning process is performed on the substrate including the trench to form a device isolation layer, which is formed by removing a portion of the second dielectric pattern. A portion of the second dielectric remains on the first dielectric pattern after the performing of the planarization process on the second dielectric.
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