发明名称 Method of removing an oxide and method of filling a trench using the same
摘要 A method of removing a portion of an oxide layer includes forming first byproducts by reacting a reaction gas with the oxide layer, the reaction gas including fluorine and nitrogen, reacting the reaction gas with the first byproducts to form second byproducts, and removing the second byproducts.
申请公布号 US7745305(B2) 申请公布日期 2010.06.29
申请号 US20080007640 申请日期 2008.01.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SEUNG-HEON;NA KYU-TAE;KIM JU-WAN;KIM TAEK-JUNG
分类号 H01L21/76 主分类号 H01L21/76
代理机构 代理人
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