发明名称 |
Method of removing an oxide and method of filling a trench using the same |
摘要 |
A method of removing a portion of an oxide layer includes forming first byproducts by reacting a reaction gas with the oxide layer, the reaction gas including fluorine and nitrogen, reacting the reaction gas with the first byproducts to form second byproducts, and removing the second byproducts.
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申请公布号 |
US7745305(B2) |
申请公布日期 |
2010.06.29 |
申请号 |
US20080007640 |
申请日期 |
2008.01.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SEUNG-HEON;NA KYU-TAE;KIM JU-WAN;KIM TAEK-JUNG |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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