发明名称 ELIMINATING POLY UNI-DIRECTION LINE-END SHORTENING USING SECOND CUT
摘要 PURPOSE: A method for eliminating poly unidirectional line-end shortening by using a second cutting process is provided to remove an irregular gate strip by performing a second cutting process on a gate electrode strip. CONSTITUTION: A substrate(10) comprises a first active region(40) and a second active region(42). A gate dielectric layer(26) is formed on the substrate and the active region. A gate electrode layer(28) is formed on a gate dielectric layer. The gate electrode layer and the gate dielectric layer are patterned to form the gate electrode strip. The gate electrode strip is formed on the active region.
申请公布号 KR20100071899(A) 申请公布日期 2010.06.29
申请号 KR20090109230 申请日期 2009.11.12
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHUANG HARRY HAK LAY;THEI KONG BENG
分类号 H01L21/027;H01L21/335 主分类号 H01L21/027
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