发明名称 |
ELIMINATING POLY UNI-DIRECTION LINE-END SHORTENING USING SECOND CUT |
摘要 |
PURPOSE: A method for eliminating poly unidirectional line-end shortening by using a second cutting process is provided to remove an irregular gate strip by performing a second cutting process on a gate electrode strip. CONSTITUTION: A substrate(10) comprises a first active region(40) and a second active region(42). A gate dielectric layer(26) is formed on the substrate and the active region. A gate electrode layer(28) is formed on a gate dielectric layer. The gate electrode layer and the gate dielectric layer are patterned to form the gate electrode strip. The gate electrode strip is formed on the active region.
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申请公布号 |
KR20100071899(A) |
申请公布日期 |
2010.06.29 |
申请号 |
KR20090109230 |
申请日期 |
2009.11.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHUANG HARRY HAK LAY;THEI KONG BENG |
分类号 |
H01L21/027;H01L21/335 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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