NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to improve the integration of the nonvolatile memory device by simplifying the arrangement of a via plug and a word line. CONSTITUTION: A plurality of semiconductor pillars is formed on a substrate(105). A plurality of control gate electrodes(120) is stacked on the substrate to surround the semiconductor pillar. A plurality of dummy electrodes(125) is adjacently separated from the control gate electrode. A plurality of via plugs(170) is combined with the control gate electrode. A word line(180) is formed on the via plug. The via plug penetrates through one control gate electrode and a part of the dummy electrodes.