发明名称 |
METHOD FOR MANUFACTURING METALNITRIDE AND APPARATUS FOR THE SAME |
摘要 |
PURPOSE: A method and an apparatus for manufacturing a metal nitride layer are provided to manufacture the metal nitride layer in a low temperature process by providing the gas with plasma-nitrogen to a reaction space by using a remote plasma unit. CONSTITUTION: A chamber(100) has a reaction space. A substrate is received in a substrate receiving unit(10). Metal materials are supplied to the reaction space. The metal materials are purged by supplying a first purge gas to the reaction space. The gas with plasma-nitrogen is supplied to the reaction space. The gas with the nitrogen is purged by supplying a second purge gas to the reaction space. A metal nitride layer is formed on the substrate.
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申请公布号 |
KR20100071657(A) |
申请公布日期 |
2010.06.29 |
申请号 |
KR20080130452 |
申请日期 |
2008.12.19 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
YUN, YOUNG SU;KIM, HYUNG SEOK |
分类号 |
H01L21/205;H01L21/28 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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