发明名称 METHOD FOR MANUFACTURING METALNITRIDE AND APPARATUS FOR THE SAME
摘要 PURPOSE: A method and an apparatus for manufacturing a metal nitride layer are provided to manufacture the metal nitride layer in a low temperature process by providing the gas with plasma-nitrogen to a reaction space by using a remote plasma unit. CONSTITUTION: A chamber(100) has a reaction space. A substrate is received in a substrate receiving unit(10). Metal materials are supplied to the reaction space. The metal materials are purged by supplying a first purge gas to the reaction space. The gas with plasma-nitrogen is supplied to the reaction space. The gas with the nitrogen is purged by supplying a second purge gas to the reaction space. A metal nitride layer is formed on the substrate.
申请公布号 KR20100071657(A) 申请公布日期 2010.06.29
申请号 KR20080130452 申请日期 2008.12.19
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 YUN, YOUNG SU;KIM, HYUNG SEOK
分类号 H01L21/205;H01L21/28 主分类号 H01L21/205
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