| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to secure process margin by securing a space for depositing a gate insulation layer and a gate conductive layer with a self aligned method. CONSTITUTION: A first spacer is formed on a vertical pillar(108) on a semiconductor substrate(100). An ion implantation region is formed on the semiconductor substrate between vertical pillars. A trench is formed by etching the ion implantation region. A silicide layer(120) is formed on the trench. A buried bit line(112a) is formed by etching the semiconductor substrate. A gate insulation layer and a gate conductive layer are formed on the side of the vertical pillar.
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