发明名称 |
Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same |
摘要 |
A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.
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申请公布号 |
US7745233(B2) |
申请公布日期 |
2010.06.29 |
申请号 |
US20080289494 |
申请日期 |
2008.10.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN SANG-MIN;KIM SUK-PIL;PARK YOUNG-SOO;LEE JUNG-HYUN;KOO JUNE-MO |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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