发明名称 Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same
摘要 A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.
申请公布号 US7745233(B2) 申请公布日期 2010.06.29
申请号 US20080289494 申请日期 2008.10.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN SANG-MIN;KIM SUK-PIL;PARK YOUNG-SOO;LEE JUNG-HYUN;KOO JUNE-MO
分类号 H01L21/00 主分类号 H01L21/00
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