发明名称 Systems and methods for power amplifier with integrated passive device
摘要 Embodiments of the invention may provide for systems and methods for providing a power amplifier with integrated passive device, thereby improving the performance of the power amplifier. The power amplifier may include a signal amplification section, a power combining section, and a coupling device section that interconnects the signal amplification section and the power combining section. The signal amplification section may be implemented on a first substrate, and the power combining section may be implemented on a second substrate, where the first substrate and the second substrate may be different. The power combining section may be implemented by the integrated passive device (IPD) that may have characteristics of high performance passive device with flexibility of implementing diverse functions, including a notch filter, a low pass filter, and/or bypass capacitance for bias network. The power combining section implemented by the integrated passive device may have an improved power combining efficiency.
申请公布号 US7746174(B2) 申请公布日期 2010.06.29
申请号 US20080138188 申请日期 2008.06.12
申请人 SAMSUNG ELECTRO-MECHANICS COMPANY, LTD. 发明人 YANG KI SEOK;CHANG JAEJOON;AN KYU HWAN;WOO WANGMYONG;LEE CHANG-HO;KIM YOUNSUK;BAE HYOGUN;KIM KIJOONG;IIZUKA SHINICHI
分类号 H03F3/68 主分类号 H03F3/68
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