发明名称 |
Capacitor that includes high permittivity capacitor dielectric |
摘要 |
A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer. A capacitor dielectric overlies the bottom electrode. The capacitor dielectric is formed from a high permittivity dielectric with a relative permittivity, preferably greater than about 5. The capacitor also includes a substantially flat top electrode that overlies the capacitor dielectric. In the preferred application, the top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.
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申请公布号 |
US7745279(B2) |
申请公布日期 |
2010.06.29 |
申请号 |
US20060331703 |
申请日期 |
2006.01.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEO YEE-CHIA;HU CHENMING |
分类号 |
H01L21/8242;H01G4/228;H01L21/00;H01L21/02;H01L21/334;H01L21/762;H01L21/8239;H01L21/84;H01L27/00;H01L27/105;H01L27/108;H01L27/12;H01L29/92;H01L29/94 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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