发明名称 |
Driving device of voltage drive type semiconductor device |
摘要 |
A driving device of an IGBT includes a high potential side switch device group having a plurality of switch devices and, one end of each switch device being connected to a high potential side; a low potential side switch device group having a plurality of switch devices and, one end of each switch device being connected to a low potential side; an drive type selective input terminal to which a drive type selection signal corresponding to drive type of the IGBT connected to the driving device is inputted; a direct drive type control unit and an indirect drive type control unit generating a control signal controlling complementarily the high potential side switch device group and the low potential side switch device group corresponding to the drive type of the IGBT; and a selector selecting the control signal controlling the high potential side switch device group and the low potential side switch device group corresponding to an inputted drive type selection signal.
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申请公布号 |
US7746158(B2) |
申请公布日期 |
2010.06.29 |
申请号 |
US20060920149 |
申请日期 |
2006.05.02 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
MORISHITA HIDETOSHI;YAMAWAKI HIDEO;SUZUKI YUU |
分类号 |
H03K17/687 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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