发明名称 Driving device of voltage drive type semiconductor device
摘要 A driving device of an IGBT includes a high potential side switch device group having a plurality of switch devices and, one end of each switch device being connected to a high potential side; a low potential side switch device group having a plurality of switch devices and, one end of each switch device being connected to a low potential side; an drive type selective input terminal to which a drive type selection signal corresponding to drive type of the IGBT connected to the driving device is inputted; a direct drive type control unit and an indirect drive type control unit generating a control signal controlling complementarily the high potential side switch device group and the low potential side switch device group corresponding to the drive type of the IGBT; and a selector selecting the control signal controlling the high potential side switch device group and the low potential side switch device group corresponding to an inputted drive type selection signal.
申请公布号 US7746158(B2) 申请公布日期 2010.06.29
申请号 US20060920149 申请日期 2006.05.02
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 MORISHITA HIDETOSHI;YAMAWAKI HIDEO;SUZUKI YUU
分类号 H03K17/687 主分类号 H03K17/687
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