| 摘要 |
<p>PURPOSE: An exposure mask and a method for forming a semiconductor device using the same are provided to accurately form a contact hole pattern without the distortion of the pattern by increasing the resolution in an exposure process. CONSTITUTION: A main contact hole pattern(100a,100b) is arranged in an x-axis direction in zigzags. An auxiliary contact hole pattern(150a-150d) is positioned on an extended line from a y axis direction of the main contact hole pattern. A region except for the main contact hole pattern and the auxiliary contact hole pattern is a light shielding pattern. The main contact hole defines a drain contact of the flash device. The expansion pattern is positioned on the side of the main contact hole pattern.</p> |
