Flash memory device and method of programming flash memory device

摘要

A flash memory device and a method of programming the same include a memory cell array, a pass/fail check circuit and a control logic circuit. The memory cell array includes multiple memory cells arranged in rows and columns. The pass/fail check circuit verifies whether data bits selected by a column address during a column scan operation have program data values. The control logic circuit detects fail data bits from the selected data bits and stores the column address in response to the verification result of the pass/fail check circuit. The control logic circuit also compares a number of the fail data bits with a reference value and controls generation of the column address according to the comparison result.