发明名称 |
Fin field effect transistors including oxidation barrier layers |
摘要 |
A method of forming a fin field effect transistor on a semiconductor substrate includes forming a fin-shaped active region vertically protruding from the substrate. An oxide layer is formed on a top surface and opposing sidewalls of the fin-shaped active region. An oxidation barrier layer is formed on the opposing sidewalls of the fin-shaped active region and is planarized to a height no greater than about a height of the oxide layer to form a fin structure. The fin structure is oxidized to form a capping oxide layer on the top surface of the fin-shaped active region and to form at least one curved sidewall portion proximate the top surface of the fin-shaped active region. The oxidation barrier layer has a height sufficient to reduce oxidation on the sidewalls of the fin-shaped active region about halfway between the top surface and a base of the fin-shaped active region. Related devices are also discussed.
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申请公布号 |
US7745871(B2) |
申请公布日期 |
2010.06.29 |
申请号 |
US20070871453 |
申请日期 |
2007.10.12 |
申请人 |
OH CHANG-WOO;PARK DONG-GUN;KIM DONG-WON;LEE YONG-KYU |
发明人 |
OH CHANG-WOO;PARK DONG-GUN;KIM DONG-WON;LEE YONG-KYU |
分类号 |
H01L29/78;H01L21/336;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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