发明名称 |
Nitride-based semiconductor device with reduced leakage current |
摘要 |
A high electron mobility transistor is disclosed which has a triple-layered main semiconductor region formed on a silicon substrate via a multilayered buffer region. The multilayered buffer region is in the form of alternations of an aluminum nitride layer and a gallium nitride layer. Whilst the aluminum nitride layers are of n-like conductivity, the gallium nitride layers are doped into p-type conductivity, with the consequent creation of pn junctions between the two kinds of buffer layers. Another pn junction is formed between one p-type gallium nitride layer and the adjoining n-like electron transit layer included in the main semiconductor region. The pn junctions serve for reduction of current leakage.
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申请公布号 |
US7745850(B2) |
申请公布日期 |
2010.06.29 |
申请号 |
US20060341276 |
申请日期 |
2006.01.27 |
申请人 |
SANKEN ELECTRIC CO., LTD. |
发明人 |
OTSUKA KOJI;CHINO EMIKO;YANAGIHARA MASATAKA |
分类号 |
H01L29/20;H01L29/778 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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