发明名称 |
Tungsten nitride atomic layer deposition processes |
摘要 |
In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μ&OHgr;-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.
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申请公布号 |
US7745329(B2) |
申请公布日期 |
2010.06.29 |
申请号 |
US20080195263 |
申请日期 |
2008.08.20 |
申请人 |
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发明人 |
WANG SHULIN;KROEMER ULRICH;LUO LEE;CHEN AIHUA;LI MING |
分类号 |
H01L21/4763;C23C16/34;C23C16/44;C23C16/455 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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