APPARATUS, METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF CONTROLLING OXYGEN DENSITY OF SILICON SINGLE CRYSTAL

摘要

PURPOSE: A method and an apparatus for manufacturing a silicon single crystal, and a method for controlling oxygen density of a silicon single crystal are provided to efficiently improve an oxygen density distribution of a growth axial direction of a silicon single crystal by applying the vibration with a specific cycle and an amplitude to the silicon single crystal. CONSTITUTION: A crucible(120) is installed inside a chamber(110). The crucible receives a silicon melted solution. A heater(130) heats a crucible. A lifting unit(140) is installed on the upper side of the chamber. The raising unit raises the silicon single crystal grown from the silicon melted solution. A controller(150) controls the raising unit to control the oxygen density of the silicon single crystal.