| 摘要 |
PURPOSE: An organo metallic precursor compound for the metallic foil or the metal oxide thin films evaporation is provided to ensure high thermal stability and high vapor pressure. CONSTITUTION: An organo metallic precursor compound for the metallic foil or the metal oxide thin films evaporation is denoted by chemical formula 1. In chemical formula 1, M is the manganese (Mn), the iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), germanium (Ge), zinc (Zn), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), lead (Pb) or ruthenium (Ru). The metallic foil or the metal oxide thin films is formed by Atomic Layer Deposition(ALD) or Metal Organic Chemical Vapor Deposition(MOCVD).
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